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| VISHAY TSHA550. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement. 94 8390 Features * Extra high radiant power * Suitable for high pulse current operation * * * * * * * Standard T-13/4 ( 5 mm) package Angle of half intensity = 24 Peak wavelength p = 875 nm High reliability Good spectral matching to Si photodetectors Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Infrared remote control and free air transmission systems with high power and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors. Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse Voltage Forward current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient t 5 sec, 2 mm from case tp/T = 0.5, tp = 100 s tp = 100 s Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 2.5 210 100 - 55 to + 100 - 55 to + 100 260 350 Unit V mA mA A mW C C C C K/W Document Number 81020 Rev. 1.3, 07-Apr-04 www.vishay.com 1 TSHA550. Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward Voltage Temp. Coefficient of VF Reverse Current Junction capacitance Test condition IF = 100 mA, tp = 20 ms IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 Symbol VF TKVF IR Cj 20 Min Typ. 1.5 - 1.6 100 Max 1.8 VISHAY Unit V mV/K A pF Optical Characteristics Tamb = 25 C, unless otherwise specified Parameter Temp. Coefficient of e Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of p Rise Time Fall Time Virtual Source Diameter IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Test condition IF = 20 mA Symbol TKe p TKp tr tr tf tf Min Typ. - 0.7 24 875 80 0.2 600 300 600 300 2.2 Max Unit %/K deg nm nm nm/K ns ns ns ns mm Type Dedicated Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward Voltage Test condition IF = 1.5 A, tp = 100 s Part TSHA5500 TSHA5501 TSHA5502 TSHA5503 Radiant Intensity IF = 100 mA, tp = 20 ms TSHA5500 TSHA5501 TSHA5502 TSHA5503 IF = 1.5 A, tp = 100 s TSHA5500 TSHA5501 TSHA5502 TSHA5503 Radiant Power IF = 100 mA, tp = 20 ms TSHA5500 TSHA5501 TSHA5502 TSHA5503 Symbol VF VF VF VF Ie Ie Ie Ie Ie Ie Ie Ie e e e e 12 16 20 24 150 200 250 300 Min Typ. 3.2 3.2 3.2 3.2 20 25 30 35 240 300 360 420 22 23 24 25 Max 4.9 4.9 4.5 4.5 60 60 60 60 Unit V V V V mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW mW mW mW www.vishay.com 2 Document Number 81020 Rev. 1.3, 07-Apr-04 VISHAY Typical Characteristics (Tamb = 25 C unless otherwise specified) 250 PV - Power Dissipation ( mW ) TSHA550. Vishay Semiconductors 10 4 IF - Forward Current ( mA ) 200 10 3 t p = 100 s t p /T = 0.001 150 R thJA 100 10 2 50 0 0 20 40 60 80 100 10 1 94 8005 0 1 2 3 4 94 7957 Tamb - Ambient Temperature ( C ) V F - Forward Voltage ( V ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Forward Current vs. Forward Voltage 125 V Frel - Relative Forward Voltage IF - Forward Current ( mA) 1.2 1.1 I F = 10 mA 1.0 0.9 100 75 50 25 0 0 20 40 60 80 100 0.8 0.7 0 20 40 60 80 100 94 8002 e Tamb - Ambient T emperature ( C ) 94 7990 T amb - Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature Figure 5. Relative Forward Voltage vs. Ambient Temperature 10 1 I e - Radiant Intensity ( mW/sr ) IF - Forward Current ( A ) 1000 TSHA 5503 TSHA 5502 100 I FSM = 2.5 A ( Single Pulse ) t p /T= 0.01 10 0 0.05 0.1 0.2 0.5 10 -1 10 -2 TSHA 5501 10 TSHA 5500 1 94 8003 10 -1 10 0 10 1 t p - Pulse Duration ( ms ) 10 2 94 8014 e 100 101 102 103 I F - Forward Current ( mA ) 104 Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Intensity vs. Forward Current Document Number 81020 Rev. 1.3, 07-Apr-04 www.vishay.com 3 TSHA550. Vishay Semiconductors 0 I e rel - Relative Radiant Intensity VISHAY 1000 - Radiant Power ( mW ) 10 20 30 100 40 1.0 0.9 0.8 0.7 50 60 70 80 10 e 1 0.1 100 94 8015 e 101 102 103 I F - Forward Current ( mA ) 104 94 8016 e 0.6 0.4 0.2 0 0.2 0.4 0.6 Figure 7. Radiant Power vs. Forward Current Figure 10. Relative Radiant Intensity vs. Angular Displacement 1.6 1.2 I e rel ; e rel I F = 20 mA 0.8 0.4 0 -10 0 10 94 8020 50 100 140 Tamb - Ambient Temperature ( C ) Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature 1.25 e - Relative Radiant Power 1.0 0.75 0.5 0.25 0 780 I F = 100 mA e ( ) rel = e ( ) / e ( p ) 880 - Wavelength ( nm ) 980 94 8000 Figure 9. Relative Radiant Power vs. Wavelength www.vishay.com 4 Document Number 81020 Rev. 1.3, 07-Apr-04 VISHAY Package Dimensions in mm TSHA550. Vishay Semiconductors 14435 Document Number 81020 Rev. 1.3, 07-Apr-04 www.vishay.com 5 TSHA550. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 81020 Rev. 1.3, 07-Apr-04 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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